TSM126CX RFG Tech Spezifikatioune
Taiwan Semiconductor Corporation - TSM126CX RFG technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Taiwan Semiconductor Corporation - TSM126CX RFG
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Taiwan Semiconductor | |
Vgs (th) (Max) @ Id | 1V @ 8µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SOT-23 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 800Ohm @ 16mA, 10V | |
Power Dissipation (Max) | 500mW (Ta) | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 51.42 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 1.18 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | Depletion Mode | |
Fuert Volt (Max Rds On, Min Rds On) | 0V, 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 30mA (Tc) | |
Basis Produktnummer | TSM126 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Taiwan Semiconductor Corporation TSM126CX RFG.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | TSM126CX RFG | TSM130NB06LCR | TSM120N06LCP | TSM120N06LCS RLG |
Hiersteller | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Supplier Device Package | SOT-23 | 8-PDFN (5x6) | TO-252, (D-Pak) | 8-SOP |
Input Capacitance (Ciss) (Max) @ Vds | 51.42 pF @ 25 V | 2175 pF @ 30 V | 2118 pF @ 30 V | 2193 pF @ 30 V |
Power Dissipation (Max) | 500mW (Ta) | 3.1W (Ta), 83W (Tc) | 2.6W (Ta), 125W (Tc) | 12.5W (Tc) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 30mA (Tc) | 10A (Ta), 51A (Tc) | 10A (Ta), 70A (Tc) | 23A (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs | 1.18 nC @ 4.5 V | 37 nC @ 10 V | 37 nC @ 10 V | 37 nC @ 10 V |
Basis Produktnummer | TSM126 | TSM130 | TSM120 | TSM120 |
Vgs (th) (Max) @ Id | 1V @ 8µA | 2.5V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA |
Entworf fir Source Voltage (Vdss) | 600 V | 60 V | 60 V | 60 V |
Fuert Volt (Max Rds On, Min Rds On) | 0V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Rds On (Max) @ Id, Vgs | 800Ohm @ 16mA, 10V | 13mOhm @ 10A, 10V | 12mOhm @ 10A, 10V | 12mOhm @ 10A, 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Serie | - | - | - | - |
Package / Case | TO-236-3, SC-59, SOT-23-3 | 8-PowerTDFN | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8-SOIC (0.154", 3.90mm Width) |
FET Feature | Depletion Mode | - | - | - |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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